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Transistors
2SC3311A
Silicon NPN epitaxial planar type
For low-frequency amplification
Complementary to 2SA1309A
■ Features
• Optimum for high-density mounting
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
h
FE
Product of no-rank is not classified and have no indication for rank.
Publication date: March 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
V
60
CBO
V
50
CEO
V
EBO
I
100
C
I
200
CP
P
300
C
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
CBO
C
V
I
CEO
C
V
I
EBO
E
I
V
CBO
CB
I
V
CEO
CE
*
h
V
FE
CE
V
I
CE(sat)
C
f
V
T
CB
C
V
ob
CB
Q
R
160 to 260
210 to 340
Unit
V
V
7
V
mA
mA
mW
°C
°C
Conditions
= 10 µA, I
= 0
E
= 2 mA, I
= 0
B
= 10 µA, I
= 0
C
= 10 V, I
= 0
E
= 10 V, I
= 0
B
= 10 V, I
= 2 mA
C
= 100 mA, I
= 10 mA
B
= 10 V, I
= −2 mA, f = 200 MHz
E
= 10 V, I
= 0, f = 1 MHz
E
S
No-rank
290 to 460
160 to 460
SJC00127BED
4.0
±0.2
2.0
±0.2
0.75 max.
+0.20
0.45
–0.10
(2.5) (2.5)
1
2
3
Min
Typ
Max
60
50
7
0.1
160
460
0.1
0.3
150
3.5
Unit: mm
+0.20
0.45
–0.10
0.7
±0.1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Unit
V
V
V
µA
µA
1
V
MHz
pF
1
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Summary of Contents for Panasonic 2SC3311A
- Page 1 Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A ■ Features • Optimum for high-density mounting • Allowing supply with the radial taping ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
- Page 2 2SC3311A T ( °C ) Ambient temperature T I CE(sat) = 10 25°C = 75°C −25°C 0.01 ( mA ) Collector current I V f = 1 MHz = 25°C ( V ) Collector-base voltage V V = 25°C...
- Page 3 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.